S-RAM CELL AND THE FABRICATING METHOD THEREOF

摘要

A SRAM(static random access memory) cell and method thereof is provided to decrease the junction capacitance and gate overlap capacitance. The method comprises the steps of: forming an n+ diffusion region(12) spaced apart from a desired distance formed in a silicon substrate(11); forming a bit-line(13) buried contact to the n+ diffusion region(12); forming a spacer(14) formed at both side walls of the bit-line(13); and forming a gate electrode(16) on a gate oxide(15) between the bit lines(13). The bit-line(13) is directly contact to the n+ diffusion region(12) in order to decrease the contact region, thereby decreasing the junction capacitance. Also, the overlap capacitance of gate electrode is decrease using the spacer(14).