PROCEDE DE REALISATION D'UN FILM MINCE DE MATERIAU SOLIDE ET APPLICATIONS DE CE PROCEDE

摘要

A method for making a thin film of optionally crystalline solid material selected from a dielectric material, a conductive material, a semi-insulating material and an unordered semiconductor material. The method comprises an ion implantation step wherein a substrate of the solid material is bombarded with ions selected from rare gas and hydrogen gas ions in order to form a layer of microcavities in the body of the substrate at a depth adjacent to the average ion penetration depth, and thus divide the substrate into two areas; and a heat treatment step wherein the microcavity layer is heated to a temperature high enough to cause separation of the two areas of the substrate either naturally or by means of an applied stress. The method is useful for producing a ferroelectric capacitor storage.