CCD manufacturing method

摘要

The method initially involves depositing one semiconductor layer (35), e.g. of polysilicon, on a substrate, and implanting impurity ions of a given concentration into it. The semiconductor layer is then structured to obtain numerous first gate electrode lines of first width at constant mutual spacing. A second semiconductor layer (38), e.g. also of polysilicon, is deposited on the first gate electrode line and the substrate exposed surface and impurity ions of a lower concentration are implanted into it. The second layer is structured to form second gate electrode lines of a greater width between the first gate electrode lines.