METHOD FOR MANUFACTURING BONDED WAFER

摘要

The present invention is a method for manufacturing a bonded wafer having a step for reducing the thickness of a thin film by performing an RTA treatment in a hydrogen-containing atmosphere on a bonded wafer after separating the bond wafer constituting the bonded wafer, and then performing a sacrificial oxidation treatment, the RTA treatment being performed under conditions in which the holding start temperature of the RTA treatment is kept above 1150°C, and the holding end temperature of the RTA treatment is kept at or below 1150°C. Thereby provided is a method for manufacturing a bonded wafer in which, when the RTA treatment and the sacrificial oxidation treatment are combined to flatten the thin-film surface of the bonded wafer and reduce the thickness of the thin film, any increase in BMD density is minimized and the thin-film surface is adequately flattened.