Verfahren zur Herstellung einer Halbleiterspeicheranordnung mit Kondensator
摘要
A semiconductor device comprises a capacitor consisting of an Al region formed on a semiconductor substrate, an Al oxide film formed on a surface of said Al region, and electrodes opposed to said Al region with interposition of said Al oxide film. The Al region can be grown selectively to produce freestanding mushroom-like structures without further pattering steps.
申请公布号
DE69126925(T2)
申请公布日期
1997.11.20
申请号
DE1991626925T
申请日期
1991.05.29
申请人
CANON K.K., TOKIO/TOKYO, JP
发明人
INOUE, SHUNSUKE, OHTA-KU, TOKYO, JP;SAKASHITA, YUKIHIKO, OHTA-KU, TOKYO, JP;NAKAMURA, YOSHIO, OHTA-KU, TOKYO, JP;KIKUCHI, SHIN, OHTA-KU, TOKYO, JP;YUZURIHARA, HIROSHI, OHTA-KU, TOKYO, JP