| 摘要 |
A semiconductor device which reduces the turn-off time and the accompanying switching loss in a switching semiconductor device in which conductivity modulation is used to provide a low ON-state voltage. The conductivity modulation is provided by injection of minority carriers. A minority carrier injection-control structure is provided in part of a semiconductor device to change the polarity of a voltage applied to a gate electrode to start or stop the injection of minority carriers. During the ON-state, minority carriers are injected to obtain a low ON-state voltage, while during the OFF-state, the injection of minority carriers are stopped and a channel for majority carriers is formed to eliminate the accumulation of excess carriers and to accelerate discharge, thereby reducing the turn-off time and thus the switching loss. |
