发明名称 TREATMENT OF SUBSTRATE AND DEVICE THEREOF
摘要 PROBLEM TO BE SOLVED: To remove offensive odor, which is generated from a substrate immediately after the treatment of the substrate, to prevent the offensive odor from leaking out to the outside by a method wherein when the substrate is taken out from a load-lock chamber into the atmosphere, the air in the load-lock chamber is forcedly exhausted while clean gas is sprayed on the surface of the substrate. SOLUTION: When a substrate 2 subsequent to an ion implantation is carried in a load-lock chamber 18, a valve 39 is opened and clean gas 36 is continued to spray on the surface of the substrate 2 through a nozzle 54. Therefore, the pressure in the chamber 18 gradually rises and soon returns to the atmospheric pressure when the return of the pressure to the atmospheric pressure is detected, a vacuum valve 22 is opened and the substrate 2 is put in a state that a carrying-out of it is possible. Even in this state, the spray of the gas 36 is not stopped and is continued until the time when the substrate 2 is at least taken out in the interior of an end station 42. Moreover, a forced exhaust, which is conducted by an exhaust duct 58, is also continued all through the time when the valve 22 is opened. Accordingly, offensive odor, which is generated from the substrate 2, is blown with the gas 36 in the chamber 18 and can be prevented from being made to flow and diffused in the station 42.
申请公布号 JPH09298136(A) 申请公布日期 1997.11.18
申请号 JP19960134352 申请日期 1996.04.30
申请人 NISSIN ELECTRIC CO LTD 发明人 TATEMICHI JUNICHI;ANDO YASUNORI
分类号 C23C14/56;H01L21/02;H01L21/205;H01L21/265;H01L21/302;H01L21/3065;H01L21/677;H01L21/68;(IPC1-7):H01L21/02;H01L21/306 主分类号 C23C14/56
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