| 摘要 |
PROBLEM TO BE SOLVED: To simplify and facilitate the electric connection inside and outside a glass cap by doping impurity to a semiconductor substrate inside and outside the cap glass in a high frequency integrated circuit where a surface acoustic wave element and a semiconductor substrate with an electric circuit formed thereon are covered by the cap glass board. SOLUTION: In a high frequency integrated circuit 10 where a glass cap 40 is connected to an upper part of a surface acoustic wave element 20 formed on a semiconductor substrate 11 with anode connection, an n-channel region is formed to a region of a p-channel silicon substrate to which the element 20 and a circuit at the outside of the cap are desired electrically to be connected, conductive bonding pads 41, 42 are formed on the surface and they are connected to the element 20 through wire bonding 51, 52. Moreover, conductive parts 61, 62 are provided to an n-channel region at the outside of the glass cap 40 so as to connect the element 20 to the outside circuit electrically. Thus, the surface acoustic wave element in the glass cap and the circuit at the outside are simply connected. |
