发明名称 REFLECTION TYPE MASK
摘要 <p>PROBLEM TO BE SOLVED: To prevent the reflectivity of a multilayer film from being reduced and to make the repeat repair of an exposure device possible without being exerted damage on the multilayer film even in the case where an absorber layer is removed by an electrolytic polishing method by a method wherein a coating layer, which is chemically stable and has a conductivity, is formed between the X-ray reflective multilayer film and the X-ray absorber layer. SOLUTION: A multilayer film 2, which reflects X-rays, a coating layer A, which is chemically stable and has a conductivity, and an absorber layer 3 provided in a prescribed pattern are laminated in order on a substrate 1. That is, the layer 4 consisting of a material, which hardly causes an oxidation or the like and is chemically stable, is formed on the surface of the film 2. Therefore, as the reflectivity of the X-rays is prevented from being reduced due to a change of the film 2 with elapsed time and the film 2 can hold constant a high reflectivity, the throughput of an exposure device is stabilized. Moreover, as the need to change an exposure time according to the reflectivity is not only eliminated but also a defective exposure due to a reduction in the reflectivity is not caused, a fraction nondefective is also enhanced. Moreover, as the irradiation intensity of the device to a mask is also reduced, the deterioration of the film 2 can be inhibited.</p>
申请公布号 JPH09298150(A) 申请公布日期 1997.11.18
申请号 JP19960114781 申请日期 1996.05.09
申请人 NIKON CORP 发明人 WASA WAKANA;SHIMIZU SUMUTO;MURAKAMI KATSUHIKO
分类号 G03F1/22;G03F1/24;H01L21/027 主分类号 G03F1/22
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