| 摘要 |
PROBLEM TO BE SOLVED: To enable fast formation of a film by thermally decomposing aβ- diketone copper complex gas to deposit a copper thin film and using a reaction accelerating gas of one of hydrogen, oxygen, mixture of these and water vapor with the gas above described. SOLUTION: After a substrate 18 mounted on a substrate holder 3 is heated, the reaction chamber 1 is evacuated to a specified vacuum degree. After a carburetor 10 and an inlet tube 11 are heated to specified temp. by energizing a heater attached to these, Ar gas is supplied to a tank 5 to increase the pressure. Thereby, aβ-diketone copper complex soln. 4 in the tank 5 is controlled to a desired flow rate by a liquid flow controller 7, supplied to the carburetor 10 and supplied to the inlet tube 11 as a specified amt. ofβ-diketone copper complex salt (source gas). A supply tube 16, tank 13, tube 14 and liquid flow controlling device 15 are heated to specified temp. by energizing a heater same as above described, water in the tank 13 is vaporized to produce water vapor, which is then introduced into the inlet tube 11 as above described. Thus, the source gas is rapidly decomposed.
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