发明名称 Process apparatus
摘要 A process apparatus whose chamber can be cleaned in a short time while not being exposed to air at all. First and second electrodes (107,105), are provided in a vacuum vessel (108). A first high-frequency power supply (112) having a first frequency is supplied to the first electrode (107), and a second high frequency power supply (101) having a second frequency different from the first frequency is provided. An impedance means and a means for connecting the second high frequency power supply to the second electrode are also provided. A means for supporting a wafer (106) is disposed on the second electrode (105), and a gas introduced into the vacuum vessel (108) is turned into a plasma by the first and second high-frequency powers. In this apparatus, a means for connecting the impedance means between the second electrode and earth during a cleaning mode of the apparatus is also provided whereby the impedance of the impedance means is made larger than the impedance between the first electrode and ground, when said impedance means is connected to said second electrode.
申请公布号 US5688330(A) 申请公布日期 1997.11.18
申请号 US19960707915 申请日期 1996.09.10
申请人 OHMI, TADAHIRO 发明人 OHMI, TADAHIRO
分类号 C23C14/34;C23C14/56;H01J37/32;(IPC1-7):C23C16/00 主分类号 C23C14/34
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