| 摘要 |
A device, e.g., an explosive-initiation device (24) includes a semiconductor bridge device (10) comprising semiconductor pads (14a, 14b) separated by an initiator bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b). The metallized lands (16a, 16b) each comprises a titanium base layer (18), a titanium-tungsten intermediate layer (20) and a tungsten top layer (22). This multilayer construction is simple to apply, provides good adhesion to semiconductor (14) and enhanced semiconductor bridge characteristics, and avoids electromigration problems attendant upon use of aluminum metallized lands under severe conditions of no-fire tests and very low firing voltage or current levels. The semiconductor (14) may optionally be covered by a cap or cover (117) of stratified metal layer similar or identical to the metallized lands (16a, 16b). A method of making semiconductor bridge devices includes metal sputtering of titanium, then titanium plus tungsten and then tungsten onto appropriately masked semiconductor surface to attain multilayer metallized lands (16a, 16b) and/or cover (117) of the invention.
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