| 摘要 |
<p>A field-electron-emission triode is based on silicon emitters prepared from an oriented whisker array. The whiskers were epitaxially grown on a (111) oriented single-crystalline silicon substrate by crystallization from vapor phase according to the vapor-liquid-solid mechanism. The same epitaxial process is used for preparation of columnar spacers that separate a gate (extracting) electrode from the substrate/cathode (spacers-1), and an anode from the cathode (spacers-2). Different diameters and heights of the tip emitters and of the columnar spacers are formed owing to different metal solvents that are used for initiation/localization of the oriented whisker growth. The semiconductor nature of the emitters makes it possible to use their high series resistance for uniformization of the field-electron-emission from large-area multiple-tip arrays. An additional uniformization of the emission is ensured owing to coating of the emitters with substances that decrease work function of the emitters.</p> |
