Semiconductor device of SiC with insulating layer a refractory metal nitride layer

摘要

A semiconductor device comprises at least one semiconductor layer of SiC and a layer of a refractory metal nitride separated by an insulating layer located next to the SiC layer of SiO2. The insulating layer comprises two sub layers, namely a first sub layer of SiO2 next to the SiC layer and a second sub layer of Si3N4 located between the first sub layer and the metal nitride layer.