发明名称 |
METHOD FOR HYDROPHILIZATION OF POLYSILICON SURFACE |
摘要 |
A method for making hydrophile property surface of polyclinics comprising ; the step embodying wet oxide membrane etching using hydrogen fluoride; and the step quenching by using the solution in which H2O2 & NH4OH are added in water so as to remove residue generated on the surface of silicon of polyclinics; is disclosed. Said solution is the solution in which H2O2 over 0.1% and NH4OH over 0.1% are added in water. Thereby, it is possible to suppress the generation of the residue easily created on the surface of the polyclinics in wet etching the oxide membrane.
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申请公布号 |
KR0121772(B1) |
申请公布日期 |
1997.11.13 |
申请号 |
KR19930023067 |
申请日期 |
1993.11.02 |
申请人 |
HYUNDAI ELECTRONICS CO.,LTD |
发明人 |
LEE, DONG-DUK;LEE, SUK-HYUN |
分类号 |
G03F7/26;(IPC1-7):G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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