发明名称 METHOD FOR HYDROPHILIZATION OF POLYSILICON SURFACE
摘要 A method for making hydrophile property surface of polyclinics comprising ; the step embodying wet oxide membrane etching using hydrogen fluoride; and the step quenching by using the solution in which H2O2 & NH4OH are added in water so as to remove residue generated on the surface of silicon of polyclinics; is disclosed. Said solution is the solution in which H2O2 over 0.1% and NH4OH over 0.1% are added in water. Thereby, it is possible to suppress the generation of the residue easily created on the surface of the polyclinics in wet etching the oxide membrane.
申请公布号 KR0121772(B1) 申请公布日期 1997.11.13
申请号 KR19930023067 申请日期 1993.11.02
申请人 HYUNDAI ELECTRONICS CO.,LTD 发明人 LEE, DONG-DUK;LEE, SUK-HYUN
分类号 G03F7/26;(IPC1-7):G03F7/26 主分类号 G03F7/26
代理机构 代理人
主权项
地址