SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can easily form an electrode having capacitive coupling and can realize a high breakdown voltage, and also to provide a method for fabricating the semiconductor device. SOLUTION: An n-type single crystal silicon substrate 1 is subjected on its one major surface to ion implanting and thermal diffusing processes to form a p-type impurity diffusion region 1a and an n type high-concentration impurity diffusion region 1b, and then subjected to a local-oxidation-of-silicon(LOCOS) process with use of a silicon nitride film 3 as a mask. The silicon nitride film 3 and silicon oxide film formed by the LOCOS oxidation are removed to form a projection 1c. Subsequently, a silicon oxide film 5 and a polysilicon layer 6 are formed, and the polysilicon layer 6 formed on a top face of the projection 1c is etched and removed. Further, a silicon oxide film 8 is formed and then etched with use of the photoresist as a mask to form openings 9a to 9c therein. A metallic wiring material 10 is filled into the openings 9a to 9c to form a metallic wiring pattern.