发明名称 |
Method for forming a plug in a semiconductor device |
摘要 |
A method for forming a plug in a semiconductor device comprising the steps of: providing openings which expose an underlying layer through an insulating layer; filling selective metal layers into openings such that one of the selective metal layers is overgrown over the surface of the insulating layer in the opening having a lower topology; forming a photoresist layer on the resulting structure; patterning the photoresist layer to expose the upper surface of the overgrown selective metal layer; removing the upper portion of the overgrown selective metal layer, such that the topology of the overgrown selective metal layers is the same as that of the non-overgrown selective metal layer; and forming a metal wiring connected to the selective metal layers.
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申请公布号 |
US5686358(A) |
申请公布日期 |
1997.11.11 |
申请号 |
US19950555789 |
申请日期 |
1995.11.09 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
CHOI, KYEONG KEUN |
分类号 |
H01L21/28;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/467 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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