| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for increasing the C-value of a capacitor in a simple process and improving the integration density of parts of DRAM. SOLUTION: FETs are formed on a Si base 1, a phosphosilicate glass 2 is deposited, an O3 /TEOS-made oxide layer 4 having a rugged island structure having a rough surface, a polycrystalline Si is deposited as first electrodes 7 to grow like rugged islands having a rough surface and a dielectric substance substance 8 is deposited thereon, resulting in a large contact area of this dielectric 8 with the first electrodes 7. Thus, it is possible to increase the C-value of the capacitor of a DRAM, without increasing the chip's area and raise the integration density of the DRAM with the same C-value. |
