SEMICONDUCTOR ELEMENT SUBSTRATE, MANUFACTURE THEREOF, AND SEMICONDUCTOR DEVICE USING ITS SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To realize high precision, a uniform surface, miniaturization and prevention of deterioration in display picture quality, by recrystallizing an amorphous conductive film to form a transparent conductive film. SOLUTION: A through-hole for connection with a metal electrode 12 on a drain side of a pixel switching element is formed in a second nitride film 15, and a transparent conductive film 17 is formed as a pixel electrode. In this case, for example, an amorphous ITO film is etched to be patterned. With the amorphous ITO film, since the etching rate on the sidewall is lower than in the direction of thickness, the quantity of etching on the sidewall may be estimated to be small and patterning precision is improved, thus enabling realization of higher precision. Subsequently, heat treatment is performed to crystallize the amorphous ITO film. Thus, the optical transmittance of the ITO film may be improved. Also, in this case, the surface roughness of the ITO film may be reduced. After that, a display section is provided with optical transmittance by a process of removing a part of a silicon wafer.