发明名称 |
Process for isolating a semiconductor layer on an insulator |
摘要 |
A process for the isolation of a semiconductor layer on an insulator. A process for isolating a semiconductor layer on an insulator is disclosed that includes the steps of: forming a first insulating layer on a semiconductor substrate, and opening a window by etching the first insulating layer which becomes an epitaxial growth seed; depositing a semiconductor layer and growing an epitaxial layer which has the same crystal structure as the semiconductor substrate under the window; forming an active area of the epitaxial layer by a photolithographic process; forming a second insulating layer on and at the side of the active area and on the first insulating layer; and isolating an active area from the semiconductor layer by forming a third insulator layer in the window by an oxidation process.
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申请公布号 |
US5686343(A) |
申请公布日期 |
1997.11.11 |
申请号 |
US19950540422 |
申请日期 |
1995.10.10 |
申请人 |
GOLDSTAR ELECTRON CO. LTD. |
发明人 |
LEE, CHANG-JAE |
分类号 |
H01L21/20;H01L21/3205;H01L21/76;H01L21/762;H01L27/00;H01L27/12;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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