发明名称 Process for isolating a semiconductor layer on an insulator
摘要 A process for the isolation of a semiconductor layer on an insulator. A process for isolating a semiconductor layer on an insulator is disclosed that includes the steps of: forming a first insulating layer on a semiconductor substrate, and opening a window by etching the first insulating layer which becomes an epitaxial growth seed; depositing a semiconductor layer and growing an epitaxial layer which has the same crystal structure as the semiconductor substrate under the window; forming an active area of the epitaxial layer by a photolithographic process; forming a second insulating layer on and at the side of the active area and on the first insulating layer; and isolating an active area from the semiconductor layer by forming a third insulator layer in the window by an oxidation process.
申请公布号 US5686343(A) 申请公布日期 1997.11.11
申请号 US19950540422 申请日期 1995.10.10
申请人 GOLDSTAR ELECTRON CO. LTD. 发明人 LEE, CHANG-JAE
分类号 H01L21/20;H01L21/3205;H01L21/76;H01L21/762;H01L27/00;H01L27/12;(IPC1-7):H01L21/76 主分类号 H01L21/20
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