SEMICONDUCTOR ELEMENT SUBSTRATE, MANUFACTURE THEREOF, AND SEMICONDUCTOR DEVICE USING ITS SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To realize high precision, a uniform surface, miniaturization and prevention of deterioration in display picture quality, by providing at least a semiconductor layer, and a transparent conductive film formed by recrystallizing an insulating film containing hydrogen and an amorphous conductive film, on a substrate. SOLUTION: Metal electrodes 19 are formed on high-density source and drain 15 of a polycrystalline silicon element 13, and a transparent conductive film 20 is formed on one of the metal electrodes 19. These are electrically insulated by an interlayer insulating film 21 formed on the gate electrodes 19, except with the high-density source and drain 15. A silicon oxide film 22 is stacked on the interlayer insulating film 21, and a metal shielding film 23 is formed thereon. A silicon nitride film 24 is formed on the metal shielding film 23. This nitride film 24 contains a large quantity of hydrogen. The transparent conductive film 20 is obtained by a process of recrystallizing the amorphous state so as to be transparent and simultaneously diffusing hydrogen from the nitride film 24 into the polycrystalline silicon element 13.