NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To realize a semiconductor storage device, from which data can be read at high speed. SOLUTION: In the selection of bit lines BL1-BL8 in this device, the pre- charge times of the bit lines BL1-BL8 are shortened by decreasing the number of the stages of the series connection of bit-line selecting transistors QB1-QB8 among the bit lines BL1-BL8 and sense amplifier circuits 9-10 by using the sense amplifier circuit 9 and the sense amplifier circuit 10, to which column decoding function is added.