| 摘要 |
PROBLEM TO BE SOLVED: To suppress the damage of bump electrodes by a method wherein supporting bumps formed of a metallic material having higher melting point than that of bump electrodes on one surface of a wiring substrate as well as set up in slightly lower level is arranged on one surface of a wiring substrate. SOLUTION: A plurality of spherically formed bump electrodes 7 are fixed on respective surfaces of a plurality of electrode pads 1B arranged on the back of a wiring substrate 1. Besides, spherically formed supporting bumps 6 are fixed on the surfaces of pads IC arranged on the back of the wiring substrate 1. At this time, the supporting bumps 6 are formed of a metallic material having higher melting point than that of the bump electrodes 7 while the level (h) in the vertical direction is set up in the level similar to or slightly lower than that of the bump electrodes 7. Through these procedures, the damage of the bump electrodes 7 due to the difference in the thermal expansion coefficients between the wiring substrate 1 and a semiconductor chip can be suppressed. |
