发明名称 Semiconductor device and manufacturing method thereof
摘要 An electrode terminal (5) provided on a surface of a semiconductor chip (4) has a square shape in plane view. Further, the projecting apex portion (8a) of a bump (8) provided on the electrode terminal (5) orients to a corner portion (5a) of the electrode terminal (5). Hereupon, a gold ball (2a) formed by melting the lower end portion of a gold wire (2) supplied through a capillary (1) is joined to the electrode terminal (5), and then the capillary (1) is moved in the direction of a diagonal line of the square electrode (5). Thus, the main portion of the gold wire (2) is separated from the gold ball (2a) so that the bump (8) is formed.
申请公布号 US5686353(A) 申请公布日期 1997.11.11
申请号 US19950576160 申请日期 1995.12.21
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YAGI, YOSHIHIKO;HIGASHI, KAZUSHI;TSUKAHARA, NORIHITO;KUMAGAI, KOICHI;YONEZAWA, TAKAHIRO
分类号 H01L21/60;H01L23/485;(IPC1-7):H01L21/44 主分类号 H01L21/60
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