发明名称 Sensor arrangement
摘要 A sensor arrangement having a substrate of doped silicon with channels in a principal face, a selective means for detecting a material, the selective means covering the principal face without filling the channels, and a measuring instrument for registering a physical quantity dependent on the influence of a material is provided. A catalytic layer is particularly used as selective means and a temperature sensor is particularly used as measuring instrument. Alternatively, the sensor arrangement is fashioned as a capacitor having a porous cooperating electrode. The channels are preferably produced by electrochemical etching.
申请公布号 US5685969(A) 申请公布日期 1997.11.11
申请号 US19940313884 申请日期 1994.09.28
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 HOENIG, ECKHARDT;LEHMANN, VOLKER;BUERKER, ULF
分类号 G01N27/14;C23C14/14;C23F1/00;C23F1/24;G01N27/16;G01N27/22;H01L21/306;H01L49/00;(IPC1-7):C25D5/02 主分类号 G01N27/14
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