发明名称 |
Sensor arrangement |
摘要 |
A sensor arrangement having a substrate of doped silicon with channels in a principal face, a selective means for detecting a material, the selective means covering the principal face without filling the channels, and a measuring instrument for registering a physical quantity dependent on the influence of a material is provided. A catalytic layer is particularly used as selective means and a temperature sensor is particularly used as measuring instrument. Alternatively, the sensor arrangement is fashioned as a capacitor having a porous cooperating electrode. The channels are preferably produced by electrochemical etching.
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申请公布号 |
US5685969(A) |
申请公布日期 |
1997.11.11 |
申请号 |
US19940313884 |
申请日期 |
1994.09.28 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HOENIG, ECKHARDT;LEHMANN, VOLKER;BUERKER, ULF |
分类号 |
G01N27/14;C23C14/14;C23F1/00;C23F1/24;G01N27/16;G01N27/22;H01L21/306;H01L49/00;(IPC1-7):C25D5/02 |
主分类号 |
G01N27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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