| 摘要 |
A word-line driver for a semiconductor memory device activates a word line corresponding to an input row address from a system. The word-line driver includes: a first pull-up transistor for providing a first row selection signal a first node connected to a first word-line according to the word-line decoding signal; a first pull-down transistor which is connected between the first node and a ground voltage, pull downs a potential of the first node according to a complementary signal of the first row selection signal; a second pull-up transistor for providing a second row selection signal to a second node connected to a second word line; a second pull-down transistor which is connected between the second node and the ground voltage, and pulls down a potential of the second node; and a switching transistor which is connected between the first node and the second node, and is controlled by the word-line decoding signal. Thereby, the word-line driver achieves a high-integration and a low power-consumption.
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