Elektriskt isolerad elektronik på kiselskivor jämte ett sätt att tillverka isolerad elektronik

摘要

The device includes a substrate of a mono-silicon plate with a plate layer of epitaxial silicon etched through so that one or more bodies (7) of epitaxial silicon are on the plate. Each body is connected with the surrounding epitaxial silicon (3) via a sheet deposited on the epitaxial silicon or a deposited thin electrical conductor running between the bodies and the surrounding epitaxial silicon. Each of the bodies incorporates electronics and a cavity (9) is located under each body, whereby the bodies hang freely in a membrane (8) formed by the sheet or in the conductor. The electronics in the bodies incorporate discrete or integrated components. The cavities are sealed against the ambience and contain vacuum. On the layer of epitaxial silicon is a layer of silicon nitride and under one or more areas of silicon nitride is the body. The cavities are located where etched away porous silicon was earlier located.