Semiconductor component e.g. power MOSFET

摘要

The component includes a semiconductor substrate (1) in which several elements are formed, and an intermediate insulation film on the substrate to hold these elements. On the intermediate insulation film is deposited an electrode with a contacting wire. The electrode main component is Al and fine-grain Si as 0.6 wt.% or less, preferably 0.1 wt.%. Typically the semiconductor substrate is of Si. In the manufacture numerous elements are formed on the semiconductor substrate, followed by forming the intermediate insulation film on the substrate for insulating the elements. On the film is deposited the electrode, using a target, containing fine-grain Si of 0.6 wt.% or less. The electrode is contained by a wire using ultrasonic power.