| 摘要 |
<p>Within the integrated device for capacitive measuring of nanometer distances above a well (14) formed in a substrate (15), one below the other there are situated electrically conductive and electrically insulated plates, namely, a movable plate (11) connected to the substrate (15), a sensing plate (12) connected to an input of a follower amplifier (4), and a plate (13) building up the electric field and being electrically insulated from the well (14) and connected to a pulsing generator (2) are fabricated. The well (14) is connected to the output of the follower amplifier (4) and projects from below the sensing plate (12) to the extent that the capacitance of the sensing plate (12) with respect to the substrate (15) is reduced to a minimum. At the drain of an input transistor (41) within the follower amplifier (4) a potential (V41d) is maintained, which potential is equal to a potential at the output of the follower amplifier (4). The device of the invention makes possible an absolute measurement of distances. By an appropriate topology of the plates of the micromechanical sensor (1) the parasitic capacitance of this sensor is eliminated, by means of an active circuit, however, also the effect of parasitic capacitances in the pertaining electronic circuit is eliminated.</p> |
