Quantum well electro-optic modulator

摘要

The modulator is obtained on a III-V semiconductor substrate, e.g. PI, and includes an n- doped layer, an active layer (CA) and a p-doped layer (3). An additional layer (5) of a given thickness (d1) is deposited between the active layer and the p-doped layer. This additional layer is transparent to the wavelength modulated by the device.