| 摘要 |
A semiconductor integrated circuit device has a differential logic circuit formed by multi-stage series-gating logic circuits each composed of bipolar transistors whose emitters are connected in common and level shift circuits each for shifting a level of an input signal that is inputted from the outside in correspondence to one of the stage logic circuits of the differential logic circuit, and for supplying the level-shifted input signal to the base of one of the bipolar transistors of the corresponding logic circuit. In particular, a potential difference between the level-shifted signals inputted to the bases of the bipolar transistors of each of the stage logic circuits is determined, as a level shift rate, to be lower than a built-in potential between the base and emitter of each of the bipolar transistors thereof. The semiconductor integrated circuit device is operative on a lower supply voltage, without significantly degrading the functions and performance thereof.
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