| 摘要 |
PROBLEM TO BE SOLVED: To provide the semiconductor memory of a nonvolatile ferroelectric substance in which data of '0's of memory cells are not lossed in the case of performing a rewriting operation and which performs a constant operation. SOLUTION: A diode 1 is connected in between a cell plate electrode 39 and the parastic resistance existing in between the cell plate 39 and a cell plate driver. Consequently, when the parastic resistance is present in between the cell plate electrode 39 and the driver driving the cell plate electrode 39, at the time a rewriting making a bit line precharging control signal BPP a logical voltage 'H' and making bit lines 35, 36 logical voltage 'L's is performed, the bit lines and the cell plate electrode 39 are prevented from becoming excessive negative voltages (no larger than -1V) temporarily by capacitive couplings due to capacitances of memory cells. |
