SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To realize a semiconductor device which is superior in withstanding voltage characteristic and little in power feed loss by irradiating charged particles at specified irradiating rate on at least one principal plane of a semiconductor substrate before heating it over a specified temp. SOLUTION: A principal plane of an n-type Si substrate 100 is irradiated with a proton beam at an irradiation rate of 5×10<12> cm-2 to from a crystal defect region 100a, impurity ions are implanted and drive-in-diffused at 1250 deg. for 150hrs. to form a p-type base layer 101 and p-type emitter layer 102 and an n-type base layer 103 is formed therebetween, thermal oxide films 100b and 100c are formed on both principal planes of the substrate 100. The oxide film 100b on the layer 101 is selectively removed to deposit an impurity on this layer 101 and the drive-in diffusion is made at 1250 deg. for 10hrs. to form an n-type emitter layer 104. The films 100b, 100c are removed to form a cathode electrode 105 and gate electrode 106 on the principal plane at the p-type base layer 101 and anode electrode 107 on the principal plane at the p-type emitter layer 102. Thus it is possible to realize a high-withstanding voltage thyristor having a low ON-voltage and little power feed loss.