| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor which is operated at a high voltage and high speed. SOLUTION: The transistor comprises a base 15 provided on a first region of a collector 14 on a substrate, an emitter 18 and an emitter contact 13 provided thereon, a support dielectric layer 16 provided on a second region of the collector 18 and on a part of the base 15, a field end electrode provided as contacted with the collector 14 on the support dielectric layer 16, a second dielectric layer covering the filed end electrode, and a thick dielectric layer 24 covering the second dielectric layer, support dielectric layer 16, emitter 18 and emitter contact 13. The thick dielectric layer 24 has a bonding pad 16, a pad connecting part 26, and an opening for the base 15 and emitter contact 13. The bonding pad is positioned on the support dielectric layer 16 and on an upper area of the opening above the field end electrode 22 as contacted with the base 15. |
