| 摘要 |
PROBLEM TO BE SOLVED: To prevent contamination by particles generated at the time of high- speed deposition of an amorphous silicon (a-Si) film in the case where a plasma chemical vapor deposition system is applied to manufacture of a semiconductor thin film, such as, an amorphous silicon photosensitive drum. SOLUTION: A cylindrical RF electrode 31, a cylindrical heater (earth electrode) 33 and a cylindrical substrate 32 are arranged in parallel in a reactor 30. An RF power is supplied between both electrodes 31, 33 by an RF generator 37 and an impedance matching unit 38. In addition, a pair of electromagnetic coils 1-a, 1-b are arranged on the axes of the electrodes 31, 33 from outside of the reactor 30, and a DC power is supplied from a DC power supply 2. A reaction gas is fed to the electrode 31 from a feed tube 34 and guided between both electrodes 31, 33 by a gas emission tube 35, thereby generating a glow discharge plasma. Thus, an a-Si thin film is formed on the surface of the substrate 32. Electrons and particles in the plasma rotate around the magnetic line of force, increasing collision with gas molecules. Also, since the generated particles are negatively charged, the particles rotate around the magnetic line of force and do not migrate to the substrate 32. Thus, contamination by particles on the surface of the substrate 32 is prevented. |
