发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To prevent the deterioration of the breakdown strength of a capacity element whose capacity insulating film is made of ferroelectric material. SOLUTION: A capacity element is composed of a bottom electrode 12A, which is composed of ruthenium oxide film (conductive metal oxide layer), capacity insulating film composed of strontium titanate film (ferroelectric material) formed on the bottom electrode 12A and a top electrode 14A composed of ruthenium oxide film (conductive metal oxide layer) formed on the capacity insulating film. The oxidation reduction reaction on the interface between the capacity insulating trim 13 and the metal electrode, which becomes the cause for breakdown strength deterioration of the capacity element, is suppressed.
申请公布号 JPH09283721(A) 申请公布日期 1997.10.31
申请号 JP19960087841 申请日期 1996.04.10
申请人 HITACHI LTD 发明人 ARAI TOSHIYUKI;HORIKOSHI KAZUHIKO
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108 主分类号 H01L27/04
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