| 摘要 |
PROBLEM TO BE SOLVED: To obtain an epitaxial film coming into contact with a mask end face without using an oxide mask of a special end face shape by a method wherein an opening part reaching a substrate face is provided in a desired region of a thin film formed on the entire face of a semiconductor substrate, and an epitaxial film is formed on this opening part and heated at a specific temperature. SOLUTION: An oxide film 2 is formed on the entire face of a silicon substrate 1, a resist film is formed on the entire of the oxide film 2, and an opening part is provided in a desired portion by a photograph etching method. The oxide film exposed from this opening part is etched and removed so that the oxide film 2 having an opening part is formed on the (100) silicon substrate 1. Continuously, with the use of this oxide film 2 as a mask, a silicon epitaxial growth is carried out and a silicon selective epitaxial film 3 is formed. Next, following this selective epitaxial growth, heating is made under existence of hydrogen gas at 800 deg.C or over, for example at 1000 deg.C. |
