| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor insulation film for semiconductor devices, that contains no SiOx Nx and can be thin. SOLUTION: A first structure 13 is obtained by forming a silicon layer 11 on a background 10 at first in the forming process of a silicon nitride film. Then thermal nitriding processing is applied to the first structure in a state that a natural oxide film 12 is formed on the surface of the silicon layer 11 to obtain a second structure 17 where the surface region of the silicon layer is changed into a silicon nitride layer 14 and the natural oxide film is changed into a silicon nitride oxide film (SiOx Nx film, where x, y denote the composition) 16. Furthermore, a third structure 19 is obtained, where the silicon nitride film 14 is left by selectively removing the silicon nitride oxide film through etching. |
