Efficient semiconductor device production by CVD

摘要

A semiconductor device production process, in which a thin film is deposited on a semiconductor substrate (22) in a CVD reaction chamber (21), involves forming a reservoir region, which retains film-producing gas near the substrate surface, and producing a thin film on the substrate using only gas from this reservoir region. The reservoir region if formed by reducing the chamber pressure to not greater than a predetermined value, introducing the substrate into the chamber, supplying reactive gas into the chamber to form a closed space forming the reservoir region near the substrate surface when the chamber pressure attains a predetermined value and then reducing the reactive gas supply rate and simultaneously supplying an inert gas into the chamber to maintain the chamber pressure at the predetermined value. Also claimed are semiconductor production units and semiconductor device production processes employing these units; a semiconductor device production process involving etching of a semiconductor substrate (22) in an etching chamber (21), a reservoir region being provided for retaining etching gas near the substrate surface and etching being carried out using only the gas in the reservoir region; and a semiconductor production unit cleaning method in which interior wall surface deposits are removed by introducing deposit etching gas into the chamber, retaining the gas in the chamber and removing the deposits by etching without additional external etching gas supply.