| 摘要 |
PURPOSE:To be able to provide a finite resistance region adjacently to a superconducting region, which is nearly as high as an upper face of an oxide superconductor, by a method wherein a selected region of superconductive material or basic material thereof formed on a substrate is doped with impurity and thereafter subjected to heat treatment in oxidizing atmosphere. CONSTITUTION:A selected region of a superconductive material or a basic material 2 thereof formed on a substrate 1 is doped with impurity and thereafter subjected to heat treatment in oxidizing atmosphere for rendering Tco (temperature that resistance becomes zero) of the superconductive material low. For example, a material, which is turned into (YBa2)Cu3O6-8 after being formed into film, is provided on the insulating single-crystal substrate 1 consisting of SrTiO3 through sputtering for the formation of the basic material of the superconductive material, which is then annealed at temperature of 800-1000 deg.C in oxygen to be regenerated into the single-crystal superconductive material 2. Next, a photoresist 3 is selectively coated onto the upper face of the material 2 and a region 5 not coated with the resist is doped with silicon through ion implantation 4. Thereafter, calcination is performed in oxidizing atmosphere once again at temperature of 700-1000 deg.C so as to make Tco of an ion- implanted region 11 transfer to lower temperature side. |
