Multilayer antifuse with low leakage and method of manufacture therefor

摘要

The present invention provides for an antifuse in an integrated circuit, which has a stacked antifuse structure on a first interconnection line. The stacked structure has a first programming layer of amorphous silicon on the first interconnection line, a very thin insulating layer of silicon dioxide on the first programming layer, and a second programming layer of amorphous silicon on the very thin oxide layer. A second interconnection line on the second programming layer completes the antifuse which has a low leakage current between the first and second interconnection lines.