发明名称 Reactive ion etching apparatus
摘要 A reactive ion etching apparatus comprises a reactive chamber, an upper anode plate, a lower cathode plate, a gas introducing system and a pumping system. The cathode plate is formed as a variable potential electrode. The variable potential electrode is a combination of a conductive material and a nonconductive material.
申请公布号 US5681419(A) 申请公布日期 1997.10.28
申请号 US19950579139 申请日期 1995.12.27
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 YOON, HAK-SOON
分类号 H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/3065
代理机构 代理人
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