发明名称 |
Reactive ion etching apparatus |
摘要 |
A reactive ion etching apparatus comprises a reactive chamber, an upper anode plate, a lower cathode plate, a gas introducing system and a pumping system. The cathode plate is formed as a variable potential electrode. The variable potential electrode is a combination of a conductive material and a nonconductive material.
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申请公布号 |
US5681419(A) |
申请公布日期 |
1997.10.28 |
申请号 |
US19950579139 |
申请日期 |
1995.12.27 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
YOON, HAK-SOON |
分类号 |
H01L21/3065;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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