SELF-ALIGNED VIA AND CONTACT INTERCONNECT MANUFACTURING METHOD

摘要

An integral via structure and contact manufacturing process (10) with a first conductive layer patterning process section (12) that includes depositing a first conductive layer (34), creating a first via etch mask (44) on the first conductive layer (34), partially etching the exposed portions of the first conductive layer (34) to create first via structures (52) and a remaining first conductive layer (34), stripping the first via etch mask (44), making the remaining first conductive layer (34) with a first layer etch mask (56) that covers the via structures conductive layer (34) to form a first conductive pattern (60) having integral via structures (52). A first dielectric (72) is deposited and planarized to expose top portions of the first via structure (52) and a second conductive layer (90) is deposited, making contact with the first via structures (52). The second conductive layer (90) is patterned in the same manner as the first conductive layer (34) to create a second conductive pattern (102) with integral second via structures (98). A second dielectric layer (104) is deposited and planarized in the same manner as the first dielectric (72) exposing the second via structures (98). Third conductive layer is deposited, making contact with the second via structures (98) and patterned with convention methods to create a third conductive pattern (110). The process concludes with conventional passivation methods.