发明名称 Filmschaltungs-Metallsystem zur Verwendung in IC-Bauteilen mit Kontakthöckern
摘要 The circuit comprises thin film elements and electrical interconnections on an insulating substrate (11). The interconnections comprise a metal multilayer of, in sequence from the substrate, Ti (21), Pd or Pd-Ti alloy (22), Cu (23), Ni (24), a Cu barrier layer (25), and Au (26). A thin barrier layer of copper is interposed between the Au layer and the Ni layer, and the layer is of thickness sufficient to restrict diffusion of Ni through the Au layer. Also claimed is a composite electrical interconnection for use in circuits as above.
申请公布号 DE69500388(T2) 申请公布日期 1997.10.23
申请号 DE1995600388T 申请日期 1995.03.21
申请人 AT & T CORP., NEW YORK, N.Y., US 发明人 DEBIEC, RICHARD PAUL, LAGRANGE PARK, ILLINOIS 60525, US;EVANS, MICHAEL D., WILMINGTON, MASSACHUSETTS 01887, US;PENDERGAST, WARREN J., FERRUM, VIRGINIA 24088, US
分类号 H01R12/32;H01L21/60;H01L23/498;H01L25/16;H01R12/04;H05K1/09;H05K1/14;H05K3/24;H05K3/38;(IPC1-7):H05K1/09;H01L27/01 主分类号 H01R12/32
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