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发明名称
Semiconductor device having compound semiconductor fet of E/D structure with high noise margin
摘要
申请公布号
EP0348944(B1)
申请公布日期
1997.10.22
申请号
EP19890111778
申请日期
1989.06.28
申请人
NEC CORPORATION
发明人
HIDA, HIKARU
分类号
H01L21/8252;H01L27/06;H01L27/095;(IPC1-7):H01L27/06;H01L21/82
主分类号
H01L21/8252
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