发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
A semiconductor integrated circuit device contains a CMOS circuit that includes a plurality of N-channel transistors and a plurality of P-channel transistors. The plurality of N-channel transistors is provided with device isolation by one of a gate isolation structure and a shallow trench isolation structure. The plurality of P-channel transistors are provided with device isolation by the other of the gate isolation structure and the shallow trench isolation structure.
|
申请公布号 |
US2007267680(A1) |
申请公布日期 |
2007.11.22 |
申请号 |
US20070749274 |
申请日期 |
2007.05.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
UCHINO YUKINORI;MAENO MUNEAKI;TAKEGAWA YOICHI;OYAMATSU HISATO |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|