发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 A semiconductor integrated circuit device contains a CMOS circuit that includes a plurality of N-channel transistors and a plurality of P-channel transistors. The plurality of N-channel transistors is provided with device isolation by one of a gate isolation structure and a shallow trench isolation structure. The plurality of P-channel transistors are provided with device isolation by the other of the gate isolation structure and the shallow trench isolation structure.
申请公布号 US2007267680(A1) 申请公布日期 2007.11.22
申请号 US20070749274 申请日期 2007.05.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 UCHINO YUKINORI;MAENO MUNEAKI;TAKEGAWA YOICHI;OYAMATSU HISATO
分类号 H01L29/788 主分类号 H01L29/788
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