| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device member high in reliability and jointed at high strength by a method wherein a damage deformation of a base material which occurs in jointing using prior art soldering or an oxidized copper eutectic is removed when a semiconductor element, a lead frame or the like is mounted to an AlN base material. SOLUTION: On an AlN base material 1, in order from the base material 1 side, there are mainly provided a high melting metabolized layer 2 composed of a high melting metal such as W, Mo or the like; and a metal interposition layer 3 of which a melting point is 1000 deg.C, and of which a main components is at least 1 type of Ni, Cu and Fe, and a conductive layer 4 having copper as a main body is directly jointed onto the metal interposition layer 3 not via a solder layer. A semiconductor element 8, etc., is mounted to a semiconductor device member 5 to form a semiconductor device. |
