| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser and manufacturing method thereof which has a good window structure, high power and high quality. SOLUTION: A ZnSe layer is grown near the end face of a resonator e.g. at a growing temp. of 450 deg.C by the org. metal chemical vapor deposition method, using a Zn material e.g. dimethyl zinc (DMZn) and Se material e.g. dimethyl selenium (DMSe). As a mask does not exist near the resonator end face, ZnSe directly grows on a p-type GaAs contact layer 5 and Zn diffuses in a laser crystal but is blocked by the mask from diffusing in other part. The growing temp. of the ZnSe layer is set within a range of 400-550 deg.C. Finally the grown ZnSe is etched off, and e.g. Au/Ge/Ni/Au and T/Pt/Au are deposited to form an n-type and p-type electrodes 7 and 8, thus forming a semiconductor laser. |
