Diamond film fine processing method

摘要

The method initially involves providing a substrate (21) upon on which is deposited a buffer layer (22). On this buffer layer, e.g. of semiconductor, insulator or metal, is deposited a second buffer layer (23), e.g. of Fe, Pt, Pd, Rh or Ni, with a higher charge transfer rate than either the substrate or the initial buffer layer. The two buffer layers are selectively removed for exposing substrate surface sections. On the entire exposed surface of the substrate and on the remnants of the two buffer layers is deposited the diamond, with the diamond deposition on the buffer layer remnants using deposition of by-products (24a). The by-product deposition on the second buffer layer is removed.