发明名称 BUTSUSHITSUHYOMENHENOISHUGENSHINOKYOKUSHOTEKIKYOKYUHO
摘要 PURPOSE:To locally feed heterogenous atoms in atom level to the surface of the objective substance by a method wherein the heterogenous atoms are stored on the surface of a probe in a heterogenous molecule, the heterogenous atoms are electrostatically evaporated by applying the prescribed scanning voltage to the probe, and the heterogenous atoms are adsorbed to the surface of the objective substance. CONSTITUTION:Inside the container such as a chamber and the like is brought in the atmosphere of heterogenous molecule, and the heterogenous molecules 3 are formed into atomic state by dissociating the heterogenous molecules 3 by surface chemical reaction with an STM probe 1. Then, a heterogenous atoms 2 are adsorbed to the surface of the STM probe 1, and the heterogenous atoms 2 are stored on the surface of the STM probe 1. Then, scanning voltage is applied to the STM probe 1, and the hetelogenous atoms 2 stored on the surface of the STM probe 1 are electrostatically evaporated. The electrostatically evaporated heterogenous atoms 2 are locally adsorbed to the surface of the objective substance 4. As a result, the stress to an ultrahigh capacitance memory storage such as an atomic unit memory and the like can be obtained.
申请公布号 JP2664636(B2) 申请公布日期 1997.10.15
申请号 JP19940134641 申请日期 1994.06.16
申请人 KAGAKU GIJUTSU SHINKO JIGYODAN 发明人 KURAMOCHI HIROMI;UCHIDA HIROHISA;AONO MASAKAZU
分类号 H01L49/00;G01Q60/10;G01Q80/00;G11B9/14;H01L21/20;H01L29/06;(IPC1-7):H01L21/20 主分类号 H01L49/00
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